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    Article

    Effect of Deposition Technique of SiNx Passivation Layer on the Electrical DC and RF Properties of AlGaN/GaN HEMTs

    In this paper, we present the results of a comparative analysis of two alternative SiNx passivation techniques of AlGaN/GaN high electron mobility transistor (HEMT) manufactured using identical epitaxial structur...

    Yağmur Güler, Barış Onaylı… in Transactions on Electrical and Electronic … (2024)

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    Article

    Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs

    In this study, the effect of SiXNY bilayer passivation materials on the electrical properties of an AlGaN high electron mobility transistor (HEMT) was investigated. AlGaN/GaN HEMTs were grown on 3-inch silicon ca...

    Ahmet Serhat Dinçer, Mehmet Taha Haliloğlu… in Journal of Materials Science: Materials in… (2023)