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    Article

    Multiple zone furnaces for synthetizing and growing GaAs and InAs

    A 14-zone, horizontal furnace without any moving part has been developed for synthetizing and growing GaAs ingots. Three zones serve the maintaining of suitable arsenic pressure, while the rest of them of 35 m...

    M. Hársy, E. Lendvay in Acta Physica Hungarica (1991)

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    Article

    Growth of PbSe crystals from lead melt

    Using the growth from solution technique, PbSe was synthetized in presence of excess lead and crystallized from the metallic melt in a closed, evacuated quartz ampoule. It has been found that the preferred mor...

    V. Rakovits, M. Hársy in Acta Physica Hungarica (1985)

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    Article

    Heat conduction vs crystal defects in GaSb ingots grown by the vertical Bridgman method

    GaSb growths were performed in a vertical Bridgman arrangement to clarify the role of the radial heat loss, as the source of the radial component of thermal elastic stresses, in the formation of dislocations. ...

    M. Hársy, F. Koltai, T. Görög in Acta Physica Hungarica (1985)