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Article
Multiple zone furnaces for synthetizing and growing GaAs and InAs
A 14-zone, horizontal furnace without any moving part has been developed for synthetizing and growing GaAs ingots. Three zones serve the maintaining of suitable arsenic pressure, while the rest of them of 35 m...
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Article
Growth of PbSe crystals from lead melt
Using the growth from solution technique, PbSe was synthetized in presence of excess lead and crystallized from the metallic melt in a closed, evacuated quartz ampoule. It has been found that the preferred mor...
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Article
Heat conduction vs crystal defects in GaSb ingots grown by the vertical Bridgman method
GaSb growths were performed in a vertical Bridgman arrangement to clarify the role of the radial heat loss, as the source of the radial component of thermal elastic stresses, in the formation of dislocations. ...
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Article
The growth and texture study of GaSb ingots
GaSb was synthetized from Ga of 6N and Sb of 5N5 purity. After the synthesis the crystallization took place in Bridgman-type growth systems. Terrestrial and space experiments aboard Salyut-6 have been performe...
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Article
Heteroepitaxial overgrowth of ZnS on GaS single crystals
The heteroepitaxial overgrowth of ZnS on the basal plane of GaS single crystals was observed during the simultaneous synthesis of GaS and ZnS. The morphology and orientation of ZnS nuclei were investigated in ...
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Article
Dislocation etching of GaS
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Article
Dendritic growth of ZnS crystals
The dendritic growth of ZnS crystals in the form of long ribbons, plates and needles was observed when ZnS crystallized from liquid Ga. The cubic ribbons and plates propagated in the <211> directions, the need...
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Article
Bemerkung zur Abnahme der Leuchtintensität von Elektrolumineszenzzellen
Es wurde die Änderung der Leuchtdichte und der elektrischen Massgrössen bei Elektrolumineszenzzellen in Abhängigkeit von der Betriebszeit gemessen. Es wurde festgestellt, dass die Leuchtdichte und einige elekt...
