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    RBS Lattice Site Location and Damage Recovery Studies In GaN

    Erbium was implanted with 160 keV at doses between 5×1014 and 5×1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 6000° and 10000° C. The RBS/Channeling technique was ...

    E. Alves, M. F. DaSilva, J. C. Soares, J. Bartels… in MRS Online Proceedings Library (2011)

  2. Article

    RBS Lattice Site Location and Damage Recovery Studies in GaN

    Erbium was implanted with 160 keV at doses between 5×1014 and 5×1015 at/cm2 into (0001) epitaxial GaN on sapphire and annealed at various temperatures between 600° and 1000° C. The RBS/Channeling technique was us...

    E. Alves, M.F. DaSilva, J.C. Soares… in MRS Internet Journal of Nitride Semiconduc… (1999)

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