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Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes

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  1. Article

    Photoluminescence characterization of Mg implanted GaN

    Single crystalline (0001) gallium nitride layers, capped with a thin epitaxial aluminum nitride layer, were implanted with magnesium and subsequently annealed in vacuum to 1150-1300 °C for 10-60 minutes. Photo...

    C. Ronning, H. Hofsäss, A. Stötzler… in MRS Internet Journal of Nitride Semiconduc… (2000)

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  2. Article

    Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes

    We report on experiments which unequivocal identify the chemical nature of optical transitions related to As (2.58 eV), Ge (3.398 eV) and Se (1.49 eV) found in the photoluminescence (PL) spectra of GaN. For th...

    A. Stötzler, R. Weissenborn, M. Deicher… in MRS Internet Journal of Nitride Semiconduc… (2000)

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