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  1. No Access

    Article

    On the nature of microwave deposited hard silicon-carbon films

    Hydrogenated silicon-carbon films have been deposited from argon tetramethylsilane mixtures at 873 or 673 K, with or without hydrogen dilution and at 673 K with silane addition, by using microwave assisted CVD...

    S. Scordo, M. Ducarroir, E. Bêche, R. Berjoan in Journal of Materials Research (1998)

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    Chapter

    Single-source precursors for the chemical vapor deposition of titanium and vanadium carbide and nitride

    A comparative study of a series of 28 single organometallic precursors to the binary ceramic phases TiC, TiN, VC, VN is reported. The design of the molecules, their thermal behavior, and their use in CVD appli...

    L. Valade, R. Choukroun, P. Cassoux… in The Chemistry of Transition Metal Carbides… (1996)