Resonant Tunneling in Semiconductors
Physics and Applications
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Chapter and Conference Paper
Resonant Electron Transport in Semiconductor Barrier Structures
We report the transport properties in semiconductor structures consisting of narrow potential wells (GaAs)and barriers (GaA1As). The structures, fabricated by molecular-beamepitaxy, have been evaluated by X-ra...
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Chapter and Conference Paper
Low-Temperature Magnetotransport in InAs-GaSb Quantum Wells
We report measurements of the magneto and Hall resistance in GaSb-InAs-GaSb heterostructures at magnetic fields up to 28T and temperatures as low as 0.005K. In addition to the quantized Hall effect, extraordin...
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Chapter and Conference Paper
Fractional Hall Quantization of Two-Dimensional Holes in Gaas-GaAlAs Heterostructures
The quantum Hall effect in two-dimensional electron systems has been reported in a number of heterostructures,1–4 in which the Hall resistance, ρxy =h/νe2, shows plateaus at integral values of ν and the magneto-r...
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Chapter
Electronic Properties of Semiconductor Heterostructures in a Magnetic Field
This work is devoted to the electronic properties of semiconductor heterostructures under the application of a magnetic field. The focus is on the quantum regime where the heterostructure potential results in ...
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Article
Semiconductor Quantum-Well Heterostructures
Activities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to ...
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Chapter and Conference Paper
Electronic Properties of InAs-GaSb and Related AlSb Superlattices
We describe the InAs-GaSb superlattices and quantum wells with emphasis on their transport and optical properties. We include related structures of InAs-AlSb and GaSb-AlSb which are of interest in their own ri...
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Article
Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity
The reflection of monochromatic x-rays by a layered heterostructure can be utilized as a nondestructive probe to obtain information on the interfacial roughness in the material. Interference between x-rays ref...
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Chapter
Pressure Dependence of Band Offsets in an InAs-GaSb Superlattice
Using magneto-optical methods, we have measured the pressure dependence of the energy difference between subbands in an InAs-GaSb superlattice associated with the GaSb valence and the InAs conduction bands, re...
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Article
Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield
Total electron yield (TEY) of an InAs/GaAs heterojunction due to soft x-ray excitation has been studied. This heterojunction was prepared by an overgrowth of a 600 Å InAs layer on a GaAs substrate using molecu...
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Chapter
Resonance Raman Scattering in [111]-Oriented CdTe/CdMnTe Superlattices
Cd1-xMnxTe alloys can be grown in zinc-blende structure up to a composition of х~0.7. The band gap of these crystals can be continuously tuned increasing the Mn composition.1 The difference between the band gaps ...
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Article
High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells
The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs ...
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Chapter
Quantum-State Spectroscopy in Quantum Wires and Quantum Dots
We review the results obtained from spectroscopy of low-dimensional systems using capacitance measurements. This technique has provided prima facie evidence for spatial quantization in quantum wires and quantu...
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Book
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Chapter
Raman Scattering Study of CdTe/CdMnTe Superlattices
Resonant Raman scattering (RRS) by LO phonons is an optical method which provides information on the relationship between lattice-dynamical and electronic properties of crystals. A resonant enhancement of the ...
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Chapter
A Perspective of Resonant Tunneling
We provide a perspective of the development of resonant tunneling over the last two decades. The work starts with a consideration of different semiconductor materials, proceeds to discuss the effects of band s...
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Chapter
Optical and Magnetic Properties of Diluted Magnetic Semiconductor Heterostructures
Diluted magnetic semiconductors offer the unique medium for the study of semiconductor physics and magnetism through the electron-ion exchange interaction. Precisely controlled heterostructures alter the band ...
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Chapter
Materials and Physics Aspects of Quantum Heterostructures
Quantum heterostructures have evolved over the last two decades to become a prominant, multi-disciplinary field in Condensed matter science. We provide, in this work, an overview of both the materials and phys...
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Article
Formation of Mn-As Centers in In1−xMnx as Diluted Magnetic Semiconductors
XAFS spectra at the Mn K-edge were obtained for films of In1−xMnxAs (0.0014 ≤ x ≤ 0.12) grown by MBE method at two different substrate temperatures Ts = 200–210 °C and Ts = 280–300 °C. It has been found that Mn-A...
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Article
Identification of a soil metabolite of bis(trichloromethyl) sulfone by HPLC/thermospray mass spectrometry
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Article
Investigation of Local Structures Around Mn Atoms in In1-xMnxAs Diluted Magnetic Semiconductors Using Exafs
Extended x-ray absorption fine structure (EXAFS) techniques have been used to investigate the local structures in Inl-xMnxAs films grown by molecular beam epitaxy (MBE) under different processing conditions. For ...
