Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Effect of Nb do** on the microstructure and electrical properties of 0.5BZT–0.5BCT thin films prepared by the sol–gel method
In this study, Nb-doped (0.00 ≤ x ≤ 0.025) lead-free 0.5BZT–0.5BCT films were prepared on Pt/Ti/SiO2/(100)Si substrates by the sol–gel method. The effects of Nb content on the structure, diffusion phase transform...