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Article
Open AccessPurely in-plane ferroelectricity in monolayer SnS at room temperature
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferr...
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Article
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
Two-dimensional semiconductors could be used as a channel material in low-power transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials has proved challenging. In particula...
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Article
Fabrication and Surface Engineering of Two-Dimensional SnS Toward Piezoelectric Nanogenerator Application
Mechanical exfoliation is performed to fabricate ultrathin SnS layers, and chemical/thermal stability of SnS layers is discussed in comparison with GeS, toward piezoelectric nanogenerator application. Both SnS...
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Article
Open AccessGraphene field-effect transistor application-electric band structure of graphene in transistor structure extracted from quantum capacitance
Recently, various two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides and so on, have attracted much attention in electron device research. The most important characteristic of g...
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Article
Open AccessGap state analysis in electric-field-induced band gap for bilayer graphene
The origin of the low current on/off ratio at room temperature in dual-gated bilayer graphene field-effect transistors is considered to be the variable range hop** in gap states. However, the quantitative es...
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Chapter
Graphene/Metal Contact
The higher the electron mobility is, the stricter the requirement for the contact resistivity becomes, especially for graphene, which has an extremely high electron mobility. Although the ohmic contact due to ...
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Article
Open AccessOrbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact
Graphene, a 2D crystal bonded by π and σ orbitals, possesses excellent electronic properties that are promising for next-generation optoelectronic device applications. For these a precise understanding of quas...
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Chapter
Crystal Growth of Spherical Si
The spherical Si single crystal with 1mmφ has intensively attracted technological interests, since the cutting loss required for Si wafer fabrication can be reduced by 20% in terms of the solar cell application. ...
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Article
Orientation Analysis of Hexagonal Dendrite Formed from an Undercooled Melt of α-Fe2Si5
In order to elucidate the solidification process of anisotropic intermetallic compounds in the undercooled melt, the containerless solidification of α-Fe2Si5 was conducted using an electromagnetic levitator with ...
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Article
Experimental evidence of crystal fragmentation from highly undercooled Ni99B1 melts processed on an electrostatic levitator
Employing an electrostatic levitator (ESL) equipped with a CO2 laser heating setup, we solidified Ni99B1 bulk crystals through containerless processing at high undercoolings and observed grain-refined microstruct...
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Article
Direct observation of the crystal-growth transition in undercooled silicon
Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless state. The crystal morphologies on the surface of the undercooled droplets ...
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Article
Microstructure formation and phase selection in the solidification of Al2O3–5 at% SiO2 melts by splat quenching
An Al2O3–5 at% SiO2 specimen was levitated in an Aero-Acoustic Levitation apparatus and then melted when a continuous-wave CO2 laser beam heating system was incorporated. The sample can be highly undercooled when...
