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    Surface Characterization of GaN Formation on GaAs(100) Using Ammonia

    The GaN formation on GaAs(100) using NH3 has been investigated using synchrotron radiation photoemission spectroscopy and an atomic force microscope (AFM). This study showed the effect of nitridation temperatu...

    Chul Huh, Sook Ahn, Jeong Yeul Han, Keum Jae Cho… in MRS Online Proceedings Library (1997)