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Interface Stress and An Apparent Negative Poisson’s Ratio in Ag/Ni Multilayers
By use of dc-magnetron sputtering, (111) textured Ag/Ni multilayered thin films were deposited with nominal bilayer repeat lengths ranging from 2 nm to 250 nm. Bulk and interface stresses were obtained from X-...
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Article
The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al 0.4Ga 0.6N
As the group III nitride semiconductor technology matures, an increasing number of devices are being fabricated with high Al fraction AlGaN. In this study, ohmic behavior is achieved using Ti/Al/Pt/Au contacts...