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  1. No Access

    Article

    Toughness measurement of thin films based on circumferential cracks induced at conical indentation

    In the present study, circumferential ring cracks were produced in two types of alumina coatings under conical indentation. The alumina coatings were produced using reactive dual pulsed magnetron sputtering. T...

    N. D. Madsen, S. Steffensen, H. M. Jensen, J. Bøttiger in International Journal of Fracture (2015)

  2. No Access

    Article

    The dependence of the nanostructure of magnetron sputtered Cu–Ag alloy films on composition and temperature

    Cu–Ag alloy films prepared by magnetron cosputtering were characterized by using x-ray diffraction. A two-phase nanocrystalline structure of Cu grains supersaturated with Ag and Ag grains saturated with Cu was...

    K. Pagh Almtoft, A. M. Ejsing, J. Bøttiger, J. Chevallier in Journal of Materials Research (2007)

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    Article

    Influence of the substrate bias on the size and thermal stability of grains in magnetron-sputtered nanocrystalline Ag films

    The nanostructural evolution during heat treatments of direct-current magnetronsputtered Ag films, deposited at room temperature at different substrate bias voltages, was experimentally studied. A growth chamb...

    K. Pagh Almtoft, J. Bøttiger, J. Chevallier, N. Schell in Journal of Materials Research (2005)

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    Article

    On the development of the <111> fiber texture in nanocrystalline gold during growth and annealing

    The evolution during growth and subsequent annealing of the <111> fiber texture in magnetron-sputtered nanocrystalline Au films has been studied experimentally using X-ray diffraction with synchrotron radiatio...

    Klaus P. Andreasen, Norbert Schell, Thomas Jensen in MRS Online Proceedings Library (2004)

  5. No Access

    Article

    Measured and calculated thermoelastic properties of supersaturated fcc Ni(Al) and Ni(Zr) solid solutions

    Metastable face-centered cubic (fcc) solid solutions of Ni1–xAlx and Ni1–xZrx have been prepared in thin-film form using dc planar magnetron sputtering in a UHV system. In both these alloy systems, extended solub...

    J. Bøttiger, N. Karpe, J. P. Krog, A. V. Ruban in Journal of Materials Research (1998)

  6. No Access

    Article

    Interface Stress and An Apparent Negative Poisson’s Ratio in Ag/Ni Multilayers

    By use of dc-magnetron sputtering, (111) textured Ag/Ni multilayered thin films were deposited with nominal bilayer repeat lengths ranging from 2 nm to 250 nm. Bulk and interface stresses were obtained from X-...

    K. O. Schweitz, H. Geisler, J. Chevallier, J. Bøttiger in MRS Online Proceedings Library (1997)

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    Article

    Elastic Modulus and Hardness as Derived from Nanoindentation of Ni and Mo Films Prepared by Ion Beam Assisted Deposition

    Using ion beam assisted deposition, 1.5-2.2 μm thick molybdenum and nickel films were prepared on silicon substrates. Some films were found to be strongly textured. By changing the rate of Ar+ bombardment during ...

    A. Wroblewski, N. Chechenin, J. BØttiger, J. Chevallier in MRS Online Proceedings Library (1994)

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    Article

    On the chemical diffusion in layered thin films containing amorphous Co–Zr, Ni–Zr, and Fe–Zr

    The chemical diffusion in thin trilayer films of TM–TM100−xZrx–TM with an amorphous middle layer where TM = Co, Ni, or Fe and in amorphous Fe–Zr and Ni–Zr films with composition gradients has been investigated us...

    N. Karpe, J. Bøttiger, A. L. Greer, J. Janting in Journal of Materials Research (1992)

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    Article

    Diffusional Asymmetry in Amorphous Alloys: Implications for Interfacial Reactions

    Early/late transition metal systems such as Ni-Zr and Co-Zr exhibit solid state amorphization (SSA) in which the amorphous phase is formed by reaction between the crystalline elements. The rate of the amorphiz...

    A. L. Greer, K. Dyrbye, L. -U. Aaen Andersen in MRS Online Proceedings Library (1990)

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    Article

    On the Phase Formation During Ion-Beam Mixing

    The phase formation during ion-beam mixing of binary transition-metal alloys has been studied by use of Xe* , Ar* , and Ne* as a function of temperature and composition. Especially the compositio...

    L.-U. Aaen Andersen, J. Bøttiger, K. Dyrbye in MRS Online Proceedings Library (1989)

  11. No Access

    Article

    Effects on Metal/Metal-Oxide Interface Adhesion Due to Electron and Ion Irradiation

    The influence of electron and ion irradiation on the adhesion at chromium-copper thin film interfaces has been studied. The measurements were carried out with different types and thicknesses of well-characteri...

    J. Bøttiger, J. E. E. Baglin, V. Brusic, G. J. Clark in MRS Online Proceedings Library (1983)

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    Article

    Ion Beam Enhanced Adhesion of Thin Films

    Ion beam enhanced adhesion has been studied for the case of thin Cu films deposited on substrates of alumina, fused quartz and glass-ceramic. Beams of He+ (200 keV) and Ne+ (280 keV) were used, in order to test t...

    J. E. E. Baglin, G. J. Clark, J. Bøttiger in MRS Online Proceedings Library (1983)

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    Article

    Short- and long-range ion-beam mixing in Cu:Al

    Ion-beam mixing by 500-keV xenon ions has been studied in targets consisting of 2000-Å films of aluminium on a polycrystalline aluminium substrate, onto which has been evaporated a 500-Å overlayer of copper. B...

    F. Besenbacher, J. Bøttiger, S. K. Nielsen, H. J. Whitlow in Applied Physics A (1982)

  14. No Access

    Chapter

    Depth Profiling of Light Isotopes by use of Nuclear Reactions

    By analyses using nuclear reactions, the depth distributions and the absolute amount of traces of light isotopes (Z ≲ 15) within the near-surface region can be measured. The nuclear-reaction methods are comple...

    J. Bøttiger in Nuclear Physics Methods in Materials Research (1980)

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    Chapter

    Transmission Energy Spectra of Channeled Protons Scattered in Thin Silicon Films

    The transmission energy spectra of 0.2 and 0.4 MeV protons scattered from thin (∿1 µm) silicon crystals have been studied as a function of sample orientation, with and without the introduction of a thin layer ...

    F. H. Eisen, J. Bøttiger in Atomic Collisions in Solids (1975)

  16. No Access

    Chapter

    Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures

    The damage profiles of 300-keV Ar+ implants in Si, GaP, GaAs and InP and of 500-keV Kr+ implants in Si, GaP and Ge have been studied theoretically and experimentally. The profiles were measured using the channeli...

    J. Bøttiger, J. A. Davies, D. V. Morgan in Ion Implantation in Semiconductors and Oth… (1973)