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  1. No Access

    Article

    The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al 0.4Ga 0.6N

    As the group III nitride semiconductor technology matures, an increasing number of devices are being fabricated with high Al fraction AlGaN. In this study, ohmic behavior is achieved using Ti/Al/Pt/Au contacts...

    K. O. Schweitz, T. G. Pribicko, S. E. Mohney… in MRS Online Proceedings Library (2011)

  2. Article

    Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN

    K. O. Schweitz, S. E. Mohney in Journal of Electronic Materials (2001)

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    Article

    Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN

    As a first step in predicting the phase equilibria in TM-Al-Ga-N systems, where TM denotes a transition metal from the first three transition series, phase equilibria are calculated in the TM-Al-N systems, and...

    K. O. Schweitz, S. E. Mohney in Journal of Electronic Materials (2001)

  4. No Access

    Article

    Interface Stress and An Apparent Negative Poisson’s Ratio in Ag/Ni Multilayers

    By use of dc-magnetron sputtering, (111) textured Ag/Ni multilayered thin films were deposited with nominal bilayer repeat lengths ranging from 2 nm to 250 nm. Bulk and interface stresses were obtained from X-...

    K. O. Schweitz, H. Geisler, J. Chevallier, J. Bøttiger… in MRS Online Proceedings Library (1997)