Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Growth and Characterization of InGaNAs Quaternary Alloys for the Fabrication of Long Wavelength MSM Photodetectors on GaAs Substrates
In this paper, the optical and electrical properties of both as-grown and annealed thick InxGa1−xNyAs1−y layers grown by metal organic chemical vapour deposition (MOCVD) are presented. Through careful control of ...
-
Chapter
Design, Fabrication and Characterisation of High Speed GaAs MSMs for OEIC Applications
GaAs optoelectronic integrated circuits (OEICs) are rapidly finding use in a variety of communications and signal processing applications such as high speed, broadband switching (up to 10 Gbits/s and higher), ...