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  1. No Access

    Article

    Preparation and electric characterization of single phase La0.8Sr0.2Ga0.8Mg0.2O3 and La0.8Sr0.2Ga0.8Mg0.115Co0.085O3 thin films

    La0.8Sr0.2Ga0.8Mg0.2O3 (LSGM) and La0.8Sr0.2Ga0.8Mg0.115Co0.085O3 (LSGMC) thin films were deposited on single crystalline (001) Al2O3 substrates using a pulsed laser deposition technique. The LSGM and LSGMC thin ...

    Yun-Tak Lim, Jong Yeog Son in Electronic Materials Letters (2013)

  2. No Access

    Article

    Triangular ferroelectric domains of highly (111)-oriented NaNbO3 thin film on a glass substrate

    Highly (111)-oriented polycrystalline NaNbO3 (NNO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition. To obtain a well-crystallized Pt bottom electrode on glass substrates, Ta buffer ...

    Woo-Hee Kim, Jong Yeog Son in Electronic Materials Letters (2014)

  3. No Access

    Article

    Mn do** effect on the ferroelectric domain structure of BaTiO3 thin films

    We comparatively investigated the ferroelectric domain structure of BaTiO3 (BTO) and Mn-doped BTO epitaxial thin films grown on Pt/MgO substrates by pulsed laser deposition. The advantages of Mn do** included e...

    Yoonho Ahn, Jeongdae Seo, Jong Yeog Son in Electronic Materials Letters (2015)

  4. No Access

    Article

    Enhanced multiferroic properties in epitaxial Yb-doped BiFeO3 thin films

    We report the enhanced multiferroic properties of a ytterbium (Yb)- doped BiFeO3 thin film (Bi0.85Yb0.15FeO3) deposited on a (001) SrRuO3/(100) SrTiO3 substrate by pulsed laser deposition. The crystal structure, ...

    Yoonho Ahn, Jeongdae Seo, Jong Yeog Son, Joonkyung Jang in Electronic Materials Letters (2015)

  5. No Access

    Article

    Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

    Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2

    Jeongdae Seo, Yoonho Ahn, Jong Yeog Son in Electronic Materials Letters (2016)

  6. No Access

    Article

    Strain effect on ferroelectric polarization of epitaxial LuFeO3 thin films

    Epitaxial LuFeO3(LFO) thin films were deposited on La0.5Sr0.5MnO3(LSMO)/LaAlO3(LAO) substrates by pulsed laser deposition method. The LFO thin film with a thickness of 100 nm exhibited tetragonally strained stru...

    Yoonho Ahn, Joonkyung Jang, Jong Yeog Son in Applied Physics A (2016)

  7. No Access

    Article

    Ferroelectric switching response of P(VDF-TrFE) nanodots with and without nanomolds

    We investigated ferroelectric switching response of poly(vinylidene fluoride-ran-trifluoroethylene) (P(VDF-TrFE)) nanodots with and without nanomolds using piezoelectric force microscopy. Nanomolds with diameter ...

    Yoonho Ahn, Young-Han Shin, Jong Yeog Son in Applied Physics A (2016)

  8. No Access

    Article

    Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. ...

    Hyun Wook Shin, Jong Yeog Son in Electronic Materials Letters (2018)

  9. No Access

    Article

    Ferroelectric BiFeO3 nanodots formed in non-crystallized BiFeO3 thin-films via a local heating process using a heated atomic force microscope tip

    A BiFeO3 thin-film was prepared from a solution by deposition on a Pt/TiO2/SiO2/Si substrate via a spin coating process and was subsequently annealed at 300 °C for 1 h to afford a non-crystallized BiFeO3 thin-fil...

    Hyun Wook Shin, Jong Yeog Son in Journal of Sol-Gel Science and Technology (2018)