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Article
Crystal structures, ferroelectric properties, and piezoelectric properties of Sn-doped epitaxial BaTiO3 thin films
We investigated the crystal structures, ferroelectric properties, and piezoelectric properties of Sn-doped BaTiO3 (SBTO) thin films on Pt/MgO substrates. Epitaxially c-oriented SBTO thin films with Sn do** conc...
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Article
Resistive random access memory characteristics of NiO, NiO0.95, and NiO0.95/NiO/NiO0.95 thin films
Resistive random access memory (RRAM) technology is receiving a lot of attention as one of the next-generation nonvolatile memory technologies with a simple device structure and fast operation speed. However, ...
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Article
Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films
Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments confirmed that the NiO thin film...
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Article
Flexoelectric effect via piezoresponse force microscopy of domain switching in epitaxial PbTiO3 thin films
The flexoelectric effect can be exploited to control the polarization and domain structure in ferroelectric materials, potentially benefiting applications, such as nanoscale electromechanical systems, memory d...
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Article
Improvement of energy storage performance by controlling the crystallinity of Aurivillius BaBi4Ti4O15 thin films
We investigated the crystallinity, ferroelectric properties, and energy storage efficiency of Aurivillius BaBi4Ti4O15 (BBTO) thin films epitaxially deposited on single-crystal (001) Rh substrates by pulsed laser ...
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Article
Multiferroic and energy-storage characteristics of polycrystalline Ca-doped BiFeO3 thin films on Si substrates
Significant progress has been made in the enhancement of multiferroic properties with possibilities for energy harvesting and storage applications. In this study, BiFeO3 (BFO) thin films were doped with Ca, and t...
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Article
Investigation of intrinsic charge transport via alkyl thiol molecular electronic junctions with conductive probe atomic force microscopy
Herein, we demonstrate characterization of intrinsic charge transport behavior of alkyl thiol molecular electronic junctions using a conductive probe atomic force microscopy (CP-AFM). The stable contact betwee...
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Article
Multiferroic and photovoltaic current properties of tetragonally strained BiFeO3 thin films
Mn (5%) doped BiFeO3 (MBFO) thin films were epitaxially grown on La2/3Sr1/3MnO3/LaAlO3 substrates via pulsed laser deposition. The MBFO thin film was confirmed to be an epitaxial thin film having a (001) orientat...
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Article
Cu-Doped ZnO Thin Films Grown by Co-deposition Using Pulsed Laser Deposition for ZnO and Radio Frequency Sputtering for Cu
Cu-doped ZnO (CZO) thin films were fabricated on single-crystalline (0001) Al2O3 substrates by co-deposition using pulsed laser deposition for ZnO and radio frequency sputtering for Cu. CZO thin films with 0–20% ...
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Article
Ferroelectric BiFeO3 nanodots formed in non-crystallized BiFeO3 thin-films via a local heating process using a heated atomic force microscope tip
A BiFeO3 thin-film was prepared from a solution by deposition on a Pt/TiO2/SiO2/Si substrate via a spin coating process and was subsequently annealed at 300 °C for 1 h to afford a non-crystallized BiFeO3 thin-fil...
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Article
Ferroelectric properties of highly a-oriented polycrystalline Bi4Ti3O12 thin films grown on glass substrates
Thin films of highly a-oriented polycrystalline Bi4Ti3O12 (BTO) were deposited on Pt/Ta/glass substrates via pulsed laser deposition. X-ray diffraction experiments confirmed that the BTO thin films were preferent...
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Article
Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor
We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. ...
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Article
Large ferroelectric domain structures of epitaxial Bi2FeMnO6 thin films on Nb-doped SrTiO3 substrates
Epitaxial Bi2FeMnO6 (BFMO) thin films were deposited on Nb-dopedSrTiO3(Nb:STO) substrates via pulsed laser deposition. The 100-nm-thick BFMO thin films had a relatively high tetragonality with a high c/a ratio of...
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Article
Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films
Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure....
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Article
Ferroelectric switching response of P(VDF-TrFE) nanodots with and without nanomolds
We investigated ferroelectric switching response of poly(vinylidene fluoride-ran-trifluoroethylene) (P(VDF-TrFE)) nanodots with and without nanomolds using piezoelectric force microscopy. Nanomolds with diameter ...
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Article
Open AccessAnomalous domain periodicity observed in ferroelectric PbTiO3 nanodots having 180° stripe domains
Nanometer-scale ferroelectric dots and tubes have received a great deal of attention owing to their potential applications to nonvolatile memories and multi-functional devices. As for the size effect of 180° s...
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Article
Strain effect on ferroelectric polarization of epitaxial LuFeO3 thin films
Epitaxial LuFeO3(LFO) thin films were deposited on La0.5Sr0.5MnO3(LSMO)/LaAlO3(LAO) substrates by pulsed laser deposition method. The LFO thin film with a thickness of 100 nm exhibited tetragonally strained stru...
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Article
Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics
Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2
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Article
Enhanced multiferroic properties in epitaxial Yb-doped BiFeO3 thin films
We report the enhanced multiferroic properties of a ytterbium (Yb)- doped BiFeO3 thin film (Bi0.85Yb0.15FeO3) deposited on a (001) SrRuO3/(100) SrTiO3 substrate by pulsed laser deposition. The crystal structure, ...
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Article
Mn do** effect on the ferroelectric domain structure of BaTiO3 thin films
We comparatively investigated the ferroelectric domain structure of BaTiO3 (BTO) and Mn-doped BTO epitaxial thin films grown on Pt/MgO substrates by pulsed laser deposition. The advantages of Mn do** included e...
