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Room-temperature epitaxial welding of 3D and 2D perovskites
Formation of epitaxial heterostructures via post-growth self-assembly is important in the design and preparation of functional hybrid systems combining unique properties of the constituents. This is particular...
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Unraveling the synergetic mechanism of physisorption and chemisorption in laser-irradiated monolayer WS2
To further improve the quantum efficiency of atomically thin transition metal dichalcogenides (TMDs) is crucial for the realization of high-performance optoelectronic applications. To this regard, a few chemic...
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Strong coupling and pressure engineering in WSe2–MoSe2 heterobilayers
Two-dimensional materials offer an exciting platform that enables the creation of van der Waals heterostructures with rich functions and intriguing physical properties that stem from different band alignments ...
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Electronic Devices Based on Transition Metal Dichalcogenides
In spite of the tremendous development in the semiconductor industry, the Moore’s Law is believed to soon reach its limit and traditional microelectronic devices are currently facing challenges such as high en...
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Open AccessRealization of vertical metal semiconductor heterostructures via solution phase epitaxy
The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very d...
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Valley polarization in stacked MoS2 induced by circularly polarized light
Manipulation of valley pseudospins is crucial for future valleytronics. The emerging transition metal dichalcogenides (TMDs) provide new possibilities for exploring the interplay among the quantum degrees of f...
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Molecular adsorption induces the transformation of rhombohedral- to Bernal-stacking order in trilayer graphene
The Bernal (ABA)-stacked graphene trilayer is presumed to be thermodynamically more stable than the rhombohedral (ABC) counterpart. However, the thermal transformation from ABC to ABA domains does not occur at...