Skip to main content

and
  1. No Access

    Article

    Bulk growth of silicon-germanium solid solutions

    This paper provides an overview of the technology for growing bulk silicon-germanium solid solutions and of the structural properties of the solidified materials. It is an attempt to summarize and value the me...

    J. Schilz, V. N. Romanenko in Journal of Materials Science: Materials in Electronics (1995)

  2. No Access

    Article

    Influence of SiO2 surface passivation on carrier lifetimes in n-type Hg0.7Cd0.3Te

    The influence of an SiO2 surface passivation layer on the electronic transport and carrier recombination properties of n-type Hg0.7Cd0.3Te crystals has been investigated. An increase of the excess carrier lifetim...

    J. Schilz, R. Hellos, J. Ziegler in Journal of Materials Science: Materials in Electronics (1994)

  3. No Access

    Article

    Low-temperature electronic transport behaviour of powder-metallurgical SiGe alloys

    Electronic transport properties of mechanically alloyed phosphorous-doped SiGe alloys at low temperatures were examined. We found that in this granular medium hop**-processes show an influence on the electronic...

    K. Pixius, J. Schilz in Applied Physics A (1993)