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  1. No Access

    Article

    On the Thermoelectric Performance of Plasma Spray–formed Iron Disilicide

    J. Schilz, E. Müller, K. Schackenberg, H. Ernst… in Journal of Materials Science Letters (1998)

  2. No Access

    Article

    Mill setting and microstructural evolution during mechanical alloying of Mg2Si

    The mechanical alloying behaviour of magnesium and silicon to form the intermetallic compound Mg2Si and the optimum setting of a planetary ball mill for this task, were examined. For the ductile–brittle magnesium...

    M. Riffel, J. Schilz in Journal of Materials Science (1998)

  3. No Access

    Article

    Bulk growth of silicon-germanium solid solutions

    This paper provides an overview of the technology for growing bulk silicon-germanium solid solutions and of the structural properties of the solidified materials. It is an attempt to summarize and value the me...

    J. Schilz, V. N. Romanenko in Journal of Materials Science: Materials in Electronics (1995)

  4. No Access

    Article

    Influence of SiO2 surface passivation on carrier lifetimes in n-type Hg0.7Cd0.3Te

    The influence of an SiO2 surface passivation layer on the electronic transport and carrier recombination properties of n-type Hg0.7Cd0.3Te crystals has been investigated. An increase of the excess carrier lifetim...

    J. Schilz, R. Hellos, J. Ziegler in Journal of Materials Science: Materials in Electronics (1994)

  5. No Access

    Article

    Ohmic contacts to p-type Hg0.3Cd0.7Te by metalorganic chemical vapour deposition of HgTe

    Ohmic contacts were obtained to p-type Hg0.3Cd0.7Te crystals by metalorganic chemical vapour deposition (MOCVD) of HgTe as an interface material between the crystals and the contacting metal. Deposition at a redu...

    J. Schilz, J. Thompson in Journal of Materials Science (1993)

  6. No Access

    Article

    Low-temperature electronic transport behaviour of powder-metallurgical SiGe alloys

    Electronic transport properties of mechanically alloyed phosphorous-doped SiGe alloys at low temperatures were examined. We found that in this granular medium hop**-processes show an influence on the electronic...

    K. Pixius, J. Schilz in Applied Physics A (1993)

  7. No Access

    Article

    Non-classical conductivity in a bulk semiconductor up to 35 K

    We observed non-classical contributions to the conductivity in three-dimensional samples at temperatures up to 35 K. The experiments were carried out inn-type Hg0.8Cd0.2Te samples having dimensions as large as 8 ...

    J. Schilz, J. Lange, L. Mester, G. Nimtz in Zeitschrift für Physik B Condensed Matter (1990)