![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Stability of two-dimensional nanostructures
We investigate atomic and molecular nanostructures on metal surfaces by variable low-temperature scanning tunnelling microscopy. In combination with molecular dynamics calculations we achieve a detailed unders...
-
Article
Enhancement of surface self-diffusion of platinum atoms by adsorbed hydrogen
Surface diffusion of atoms is an important phenomenon in areas of materials processing such as thin-film growth and sintering. Self-diffusion (that is, diffusion of the atoms of which the surface is comprised)...
-
Article
Comparative study of methods for measuring. the apparent barrier height on an atomic scale
-
Article
Designing surface alloys with specific active sites
This report describes a combined experimental and theoretical approach to the problem of designing surface alloys with specific chemical properties. Au-Ni(111) surface alloys were prepared and the distribution...
-
Article
Direct observations of changes in surface structures by scanning tunneling microscopy
Recently, we have studied the interaction of reactive adsorbates H, C, O, and S with Ni and Cu surfaces by scanning tunneling microscopy (STM). In this paper, we briefly illustrate and discuss how such studies...
-
Article
Scanning tunneling microscopy characterization of ammonia synthesis catalysts
The possibility of studying the texture of catalysts at the atomic level by Scanning Tunneling Microscopy (STM) is demonstrated. It is shown that high resolution pictures can be obtained even for a passivated ...
-
Chapter and Conference Paper
Adsorption Position of Deuterium on the Pd(100) and Ni(111) Surface Determined by Transmission Channeling
Real space information on chemisorption positions of hydrogen isotopes on clean surfaces is straight-forwardly extracted from transmission channeling through thin crystals without any complicated and time cons...
-
Article
Sn In silicon carbide: A mossbauer and channeling study
Implantation of Sn at ∼550°C into SiC and post-annealing at 1120°C has been demonstrated to lead to a predominant population of the substitutional Si sites. The electronic structure of the Sn atoms in substitu...