Page
%P
![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Optoelectronic Properties of Plasma CVD a-Si:H Modified by Filament-Generated Atomic H
We have studied a-Si:H prepared by alternating plasma deposition with atomic H treatments performed with a heated W filament. Real time spectroscopie ellipsometry provides the evolution of film thickness, opti...