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Article
Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review
Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices....
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Article
Effect of Relative Surface Charge of Colloidal Silica and Sapphire on Removal Rate in Chemical Mechanical Polishing
Many studies have looked at the chemical mechanical polishing (CMP) process of sapphire substrates. However, the research on the processing mechanism of the sapphire substrate is insufficient compared with sem...
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Article
Self-dressing effect using a fixed abrasive platen for single-sided lap** of sapphire substrate
Single-sided lap** is crucial in sapphire wafering processes for improving flatness and achieving the target wafer thickness using loose abrasives. In single-sided lap** process, the Material removal rate ...
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Article
Investigation on diamond wire break-in and its effects on cutting performance in multi-wire sawing
Multi-wire sawing with diamond wire is used to slice hard and brittle materials such as sapphire, silicon carbide, or silicon into thin wafers. Compared to traditional slicing methods, multi-wire sawing with d...
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Article
Effect of platen shape on evolution of total thickness variation in single-sided lap** of sapphire wafer
Total thickness variation (TTV) of sapphire wafer is one of the most important geometrical parameters as it is related with the quality of LED. In the wafer manufacturing, single-sided lap** is the final pro...
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Article
Characterization of diamond wire-cutting performance for lifetime estimation and process optimization
Diamond abrasive-coated wire is a tool for the precise multi-wire sawing of mono-crystal ingots to manufacture substrates. This tool is used to cut hard materials such as silicon carbide, gallium nitride, sapp...
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Article
Development of green CMP by slurry reduction through controlling platen coolant temperature
Chemical mechanical polishing (CMP) is currently replacing a conventional chemical etching or mechanical polishing to remove overburdened copper deposit in printed circuit board (PCB) manufacturing process owi...
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Article
Effect of initial deflection of diamond wire on thickness variation of sapphire wafer in multi-wire saw
Sapphire wafers are widely used as substrates for fabricating gallium nitride light-emitting diodes. The quality of light-emitting diodes depends on the total thickness variation and BOW of the wafers. The mul...
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Article
The influence of abrasive size on high-pressure chemical mechanical polishing of sapphire wafer
Demand for sapphire wafer has increased with growth of LED market. Chemical mechanical polishing (CMP) comprises a large part of wafering cost since the CMP process requires approximately 3–6 hours. For longer...
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Article
Local/global planarization of polysilicon micropatterns by selectivity controlled CMP
The planarization CMP, which is considered as one of the most important ULSI chip, is introduced to make flat surface in patterned areas for multilevel MEMS devices. However, the conventional CMP is limited in...
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Article
Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization
The kinematics of conventional, rotary chemical mechanical planarization (CMP) was analyzed, and its effect on polishing results was assessed. The authors define a novel parameter, ζ, as a “kinematic number,” ...
