7 Result(s)

Article

Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pum**

We reported exciton binding-energy determination using tunneling-current spectroscopy of Germanium (Ge) quantum dot (QD) single-hole transistors (SHTs) operating in the few-hole regime, under 405–1550 nm wavel...

Po-Yu Hong, Chi-Cheng Lai, Ting Tsai, Horng-Chih Lin, Thomas George… in Scientific Reports (2023)

Article

Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

Po-Yu Hong, Chin-Hsuan Lin, I.-Hsiang Wang, Yu-Ju Chiu, Bing-Ju Lee… in Applied Physics A (2023)

Article

The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms

Beginning with our exciting discovery of germanium (Ge) spherical quantum-dot (QD) formation via the peculiar and symbiotic interactions of Si, Ge, and O interstitials, we have embarked on a journey of vigorou...

Po-Yu Hong, Chin-Hsuan Lin, I.-Hsiang Wang, Yu-Ju Chiu, Bing-Ju Lee… in Applied Physics A (2023)

Article

Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si_0.85Ge_0.15 at high temperature. Pairs...

Tsung-Lin Huang, Kang-** Peng, Ching-Lun Chen, Horng-Chih Lin… in Scientific Reports (2019)

Article

High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterost...

Ming-Hao Kuo, Meng-Chun Lee, Horng-Chih Lin, Tom George, Pei-Wen Li in Scientific Reports (2017)

Article

Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al₂O₃ stack structure using an implant-free technique

In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al₂O₃ gate stack using an implant-free approach. Since the source/drain and channel regions are ...

Chun-Jung Su, Tzu-I Tsai, Horng-Chih Lin, Tiao-Yuan Huang… in Nanoscale Research Letters (2012)

Article

A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n⁺-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by em...

Chun-Jung Su, Tuan-Kai Su, Tzu-I Tsai, Horng-Chih Lin… in Nanoscale Research Letters (2012)