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Article
Open AccessDetermination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pum**
We reported exciton binding-energy determination using tunneling-current spectroscopy of Germanium (Ge) quantum dot (QD) single-hole transistors (SHTs) operating in the few-hole regime, under 405–1550 nm wavel...
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Article
Open AccessCorrection: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms
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Article
Open AccessThe amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms
Beginning with our exciting discovery of germanium (Ge) spherical quantum-dot (QD) formation via the peculiar and symbiotic interactions of Si, Ge, and O interstitials, we have embarked on a journey of vigorou...
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Article
Open AccessTunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs...
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Article
Open AccessHigh Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterost...
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Investigations on Transport Properties of Poly-silicon Nanowire Transistors Featuring Independent Double-Gated Configuration Under Cryogenic Ambient
Transport properties of poly-Si nanowire transistors, which were fabricated by a simple and low-cost method, are examined in this chapter. The proposed device features two independent gates and thus allows mor...
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Article
Open AccessLow-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al2O3 gate stack using an implant-free approach. Since the source/drain and channel regions are ...
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Article
Open AccessA junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by em...
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Article
Fabrication and Characterization of Poly-Si Schottky-Barrier Thin-Film Transistors
Poly-Si Schottky-barrier thin-film transistors (SB-TFTs) were fabricated and characterized. In this study, SB-TFTs were first fabricated by using a conventional sidewall spacer to isolate the gate and S/D regi...
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Article
Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation
The effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant impro...
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Article
Breakdown Characteristics of Ultra-Thin Gate Oxides Caused by Plasma Charging
Breakdown characteristics of ultra-thin gate oxides caused by plasma charging were studied in this work. It is observed that as oxide thickness is scaled down to 4 nm, some traditional monitor parameters may l...
