-
Article
Fabrication and Characterization of Poly-Si Schottky-Barrier Thin-Film Transistors
Poly-Si Schottky-barrier thin-film transistors (SB-TFTs) were fabricated and characterized. In this study, SB-TFTs were first fabricated by using a conventional sidewall spacer to isolate the gate and S/D regi...
-
Article
Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation
The effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant impro...
-
Article
Breakdown Characteristics of Ultra-Thin Gate Oxides Caused by Plasma Charging
Breakdown characteristics of ultra-thin gate oxides caused by plasma charging were studied in this work. It is observed that as oxide thickness is scaled down to 4 nm, some traditional monitor parameters may l...