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  1. Article

    Open Access

    Determination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pum**

    We reported exciton binding-energy determination using tunneling-current spectroscopy of Germanium (Ge) quantum dot (QD) single-hole transistors (SHTs) operating in the few-hole regime, under 405–1550 nm wavel...

    Po-Yu Hong, Chi-Cheng Lai, Ting Tsai, Horng-Chih Lin, Thomas George in Scientific Reports (2023)

  2. Article

    Open Access

    Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe

    We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs...

    Tsung-Lin Huang, Kang-** Peng, Ching-Lun Chen, Horng-Chih Lin in Scientific Reports (2019)

  3. Article

    Open Access

    High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects

    We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterost...

    Ming-Hao Kuo, Meng-Chun Lee, Horng-Chih Lin, Tom George, Pei-Wen Li in Scientific Reports (2017)