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Article
Open AccessDetermination of exciton binding energy using photocurrent spectroscopy of Ge quantum-dot single-hole transistors under CW pum**
We reported exciton binding-energy determination using tunneling-current spectroscopy of Germanium (Ge) quantum dot (QD) single-hole transistors (SHTs) operating in the few-hole regime, under 405–1550 nm wavel...
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Article
Open AccessTunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe
We report the novel tunability of the diameters and spacings of paired Ge double quantum dots (DQDs) using nano-spacer technology in combination with selective oxidation of Si0.85Ge0.15 at high temperature. Pairs...
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Article
Open AccessHigh Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects
We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850–1550 nm illumination. Each device has a self-organized, gate-stacking heterost...