7 Result(s)
within
Hiroshi Fujioka
Science, Humanities and Social Sciences, multidisciplinary
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Article
Open AccessOptical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition
We have characterized highly conductive Si-doped GaN films with a high electron mobility of 112 cm2V−1s−1 at an electron concentration of 2.9 × 1020 cm−3, prepared using pulsed sputtering deposition (PSD). With a...
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Article
Open AccessAlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
In this study, InAlN was grown on glass substrates using pulsed sputtering deposition (PSD) at room temperature (RT) and was applied to thin-film transistors (TFTs). The surface flatness of the InAIN films was...
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Article
Open AccessPulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO
m-Plane GaN and InGaN films were grown on m-plane ZnO substrates at ~350 °C by pulsed sputtering deposition. It was found that the critical thickness of the m-plane GaN films grown on ZnO...
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Article
Open AccessFabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications ...
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Article
Open AccessFabrication of InGaN thin-film transistors using pulsed sputtering deposition
We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which ena...
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Article
Open AccessFabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices be...
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Article
Open AccessField-effect transistors based on cubic indium nitride
Although the demand for high-speed telecommunications has increased in recent years, the performance of transistors fabricated with traditional semiconductors such as silicon, gallium arsenide and gallium nitr...
