Page
%P
-
Article
Electrical characteristics of low temperature-Al0.3Ga0.7As
In this work, we present electrical characterizations of n+ GaAs/low temperature (LT)-Al0.3Ga0.7As/n+ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. ...
-
Article
Application of low temperature GaAs to GaAs/Si
Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-...