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within Hiroshi Fujioka Remove this filter Optical and Electronic Materials Remove this filter Solid State Physics Remove this filter

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  1. No Access

    Article

    Electrical characteristics of low temperature-Al0.3Ga0.7As

    In this work, we present electrical characterizations of n+ GaAs/low temperature (LT)-Al0.3Ga0.7As/n+ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. ...

    Ashish K. Verma, Jay Tu, J. S. Smith, Hiroshi Fujioka… in Journal of Electronic Materials (1993)

  2. No Access

    Article

    Application of low temperature GaAs to GaAs/Si

    Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-...

    Hiroshi Fujioka, Hyunchul Sohn, Eicke R. Weber… in Journal of Electronic Materials (1993)