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Open Access37th International Symposium on Intensive Care and Emergency Medicine (part 3 of 3)
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Light absorption in Ge nanoclusters embedded in SiO2: comparison between magnetron sputtering and sol–gel synthesis
SiGeO films have been produced by a sol–gel derived approach and by magnetron sputtering deposition. Post-thermal annealing of SiGeO films in forming gas or nitrogen atmosphere between 600 and 900 °C ensured t...
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Open AccessReduced expression of PPAR-β/δ limits the potential beneficial effects of GW0742 during septic shock in atherosclerotic swine
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Structural and electrical properties of sol–gel derived Ge nanocrystals in SiO2 films
Stoichiometric mixed germanate–silicate glass films were fabricated on boron-doped silicon substrates by means of a sol–gel based synthesis procedure. In order to initiate the growth of elemental germanium (Ge...
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Open AccessImpact of hepatic venous oxygen efflux and carotid blood flow on the difference between mixed and central venous oxygen saturation
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Time-dependent effects of intravenous H2S during long-term, resuscitated porcine hemorrhagic shock
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Effects of volume resuscitation on hepatosplanchnic oxygen consumption, liver mitochondrial function and mortality in endotoxemia
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Aggressive and moderate fluid resuscitation in septic pigs: consequences on morbidity
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Apparent heterogenity in splanchnic vascular response to norepinephrine during sepsis
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Large disparity between gallium and antimony self-diffusion in gallium antimonide
The most fundamental mass transport process in solids is self-diffusion. The motion of host-lattice (‘self-’) atoms in solids is mediated by point defects such as vacancies or interstitial atoms, whose formati...
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Influence of iloprost on hepato splanchnic metabolic activity and energy balance in patients with septic shock
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Effect of a dopexamine induced increase in cardiac output on splanchnic hemodynamics in septic shock
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Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon
We present out-diffusion of Zn in Si as a new method to study properties of Si vacancies. Out-diffusion experiments were performed on homogeneously Zn-doped Si samples at 1107°C and 1154°C. The resulting conce...
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Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon
We present out-diffusion of Zn in Si as a new method to study properties of Si vacancies. Out-diffusion experiments were performed on homogeneously Zn-doped Si samples at 1107°C and 1154°C. The resulting conce...
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Self-Diffusion in Isotopically Controlled Heterostructures of Elemental and Compound Semiconductors
We report self-diffusion studies of silicon between 855 and 1388°C in highly enriched epitaxial 28Si layers. Diffusion profiles of 30Si and 29Si are determined with high resolution secondary ion mass spectrometry...
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Diffusion of Gold into Heavily Boron-Doped Silicon
Diffusion of Au into dislocation-free and highly dislocated Si with high B-background do** levels has been investigated with the aid of neutron activation analysis in conjunction with mechanical sectioning. ...
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Vacancy-Mediated Interstitial-Substitutional Diffusion in Semiconducting and Metallic Matrices
Although in many studies of fast impurity diffusion interstitial-substitutional exchange involving vacancies is suggested, until recently only for Cu in Ge convincing experimental evidence for this so-called d...