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  1. No Access

    Article

    Polarization Properties in GaN Double-Channel HEMTs at Mid-Infrared Frequencies

    The polarization properties of grating-gate GaN-based high electron mobility transistors in the mid-infrared region have been investigated. However, due to the lack of research on the absorption characteristic...

    Runxian **ng, Hongyang Guo, Guohao Yu, Jiaan Zhou, An Yang, Shige Dai… in Plasmonics (2024)

  2. No Access

    Article

    Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate

    We describe the plasmon resonances of AlGaN/GaN HEMT-array with a shifted gate at THz frequencies. By altering gate voltage and gate length, we obtained absorption spectra at different gate positions using the...

    Runxian **ng, ** Zhang, Hongyang Guo, Guohao Yu, Jiaan Zhou, An Yang… in Plasmonics (2024)