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Open AccessHighly defective ultra-small tetravalent MOF nanocrystals
The size and defects in crystalline inorganic materials are of importance in many applications, particularly catalysis, as it often results in enhanced/emerging properties. So far, applying the strategy of mod...
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Article
CdZnTe Crystal Quality Study by Cathodoluminescence Measurements
Improving material quality is an essential step to maintain high electro-optical performance at higher operating temperature (HOT) of cooled II-VI infrared (IR) detectors. Indeed, the electrical activity of cr...
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Article
Open AccessA robust ultra-microporous cationic aluminum-based metal-organic framework with a flexible tetra-carboxylate linker
Al-based cationic metal-organic frameworks (MOFs) are uncommon. Here, we report a cationic Al-MOF, MIP-213(Al) ([Al18(μ2-OH)24(OH2)12(mdip)6]6Cl·6H2O) constructed from flexible tetra-carboxylate ligand (5,5'-Meth...
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Article
Open AccessDefect free strain relaxation of microcrystals on mesoporous patterned silicon
A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-establi...
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Article
Defects Characterization of HgCdTe and CdZnTe Compounds by Positron Annihilation Spectroscopy
Infrared cooled photodetectors must operate at higher temperatures to reduce their size, weight and power consumption (SWaP context). Their stability and image quality are then challenged by extra electrical a...
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Article
Open AccessDouble-crowned 2D semiconductor nanoplatelets with bicolor power-tunable emission
Nanocrystals (NCs) are now established building blocks for optoelectronics and their use as down converters for large gamut displays has been their first mass market. NC integration relies on a combination of ...
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Article
Electroluminescence from nanocrystals above 2 µm
Visible nanocrystal-based light-emitting diodes (LEDs) are about to become commercially available. However, their infrared counterparts suffer from two key limitations. First, III–V semiconductor technologies ...
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Article
Open AccessGeSnOI mid-infrared laser technology
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser techn...
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Article
Strain, magnetic anisotropy, and composition modulation in hybrid metal–oxide vertically assembled nanocomposites
Self-assembled vertically aligned nanocomposites (VANs) have recently emerged as a novel playground for strain engineering of physical properties in nanostructures. In contrast to thin films obtained by classi...
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Open AccessEffectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer. By using a patterned dielectric mask with open...
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Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 ...
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Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts
Three-dimensional (3D) nanoscale crystal sha** has become essential for the precise design of advanced electronic and quantum devices based on electrically gated transport. In this context, III-V semiconduct...
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Open AccessUprooting defects to enable high-performance III–V optoelectronic devices on silicon
The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new de...
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Article
Open AccessQuantum cascade lasers grown on silicon
Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light ...
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Open AccessGas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications
The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to wearable, mobile or disposable systems. The main keys...
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Open AccessElectronic properties of (Sb;Bi)2Te3 colloidal heterostructured nanoplates down to the single particle level
We investigate the potential use of colloidal nanoplates of Sb2Te3 by conducting transport on single particle with in mind their potential use as 3D topological insulator material. We develop a synthetic procedur...
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Open AccessFlexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thi...
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Open AccessLow temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration
The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and com...
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Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics
In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using M...
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Local probing of the interfacial strength in InP/Si substructures
InP membranes have been bonded oxide mediated onto a patterned and unpatterned Si substrate. Indentation is shown to allow local testing on patterned areas. Both responses on patterned and unpatterned are comp...
