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  1. No Access

    Article

    Natural analogues: a potential approach for develo** reliable monitoring methods to understand subsurface CO2 migration processes

    One possible way of mitigating carbon dioxide (CO2) emissions from fossil fuel combustion is using carbon dioxide capture and storage (CCS) technology. However, public perception concerning CO2 storage in the geo...

    C. Schütze, U. Sauer, K. Beyer, H. Lamert, K. Bräuer in Environmental Earth Sciences (2012)

  2. No Access

    Article

    Evaluation of groundwater dynamics and quality in the Najd aquifers located in the Sultanate of Oman

    The Najd, Oman, is located in one of the most arid environments in the world. The groundwater in this region is occurring in four different aquifers A to D of the Hadhramaut Group consisting mainly of differen...

    K. Al-Mashaikhi, S. Oswald, S. Attinger, G. Büchel in Environmental Earth Sciences (2012)

  3. No Access

    Article

    Spectroscopic ellipsometric characterization of organic films obtained via organic vapor phase deposition

    Thin films of Tris(8-hydroxyquinoline)-aluminum(III) (Alq3) and N,N-Di-[(1-naphthyl)-N,N-diphenyl]-(1,1-biphenyl)-4,4-diamine (α-NPD ) were deposited on large-area silicon substrates by means of the recently ...

    C. Himcinschi, N. Meyer, S. Hartmann, M. Gersdorff, M. Friedrich in Applied Physics A (2005)

  4. No Access

    Article

    The Application of Stable Isotopes for Assessing the Hydrological, Sulfur, and Iron Balances of Acidic Mining Lake ML 111 (Lusatia, Germany) as a Basis for Biotechnological Remediation

    Stable isotope (δ18O–H2O, δ2H–H2O δ34S–SO4 2-) andhydrochemical data (SO4 2-, Fe-concentrations) have beenused to estimate the annual groundwater inflow and outflow of mining lake ML 111 and to calculate the tota...

    K. Knöller, G. Strauch in Water, Air and Soil Pollution: Focus (2002)

  5. No Access

    Article

    Hydrogeological Basis for Biotechnological Remediation of the Acidic Mining Lake ‘RL 111’, Lusatia (Germany)

    The drainage basin of the acidic mining lake ‘RL 111’ was characterized by hydrogeological and geochemical models to assess its influence on a planned biotechnological remediation of the lake water and lake se...

    E. Bozau, G. Strauch in Water, Air and Soil Pollution: Focus (2002)

  6. No Access

    Chapter and Conference Paper

    Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor

    The article addresses the use of computational modelling during the equipment design and process development of the Planetary Reactor®, an industrial production scale multiwafer reactor for the MOCVD (Metalorgani...

    M. Dauelsberg, M. Deufel, M. Reinhold in Simulation of Semiconductor Processes and … (2001)

  7. Article

    Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

    Multiwafer Planetary Reactor is a promising system for large-scale production of heterostructures for LED’s based on III-group nitrides. Analysis of chemical processes occurring in the reactor allows one to ge...

    R. A. Talalaev, E. V. Yakovlev in MRS Internet Journal of Nitride Semiconduc… (1999)

  8. No Access

    Article

    Ternary Group-III-Nitrides Grown in Movpe Production Reactors

    Using production scale AIXTRON MOCVD systems various heterointerfaces in the GaInN/GaN system have been studied in depth. GaInN single hetero layers were investigated to optimise photoluminescence properties. ...

    O. Schoen, H. Protzmann, M. Schwambera, B. Schineller in MRS Online Proceedings Library (1998)

  9. No Access

    Article

    Sulfate Reduction in a Lake and the Groundwater of a Former Lignite Mining Area Studied by Stable Sulfur and Carbon Isotopes

    The isotopic and chemical composition of water and dissolved sulfur and carbon compounds from a flooded lignite-mining lake and a dump site in Central Germany (today partly covered by a landfill) is used to in...

    G. Asmussen, G. Strauch in Water, Air, and Soil Pollution (1998)

  10. No Access

    Article

    MOVPE production reactors for high temperature electronics

    For the fabrication of epitaxial films of silicon carbide or the Group III nitrides, high growth temperatures (up to 1700°C) and fast heating and cooling of the growth environment have been found to be necessa...

    H. Protzmann, B. Wachtendorf, O. Schoen, D. Schmitz in Journal of Electronic Materials (1998)

  11. No Access

    Chapter and Conference Paper

    Development of a gas-phase chemistry model for numerical prediction of MOVPE of GaN in industrial scale reactors

    A mathematical model has been developed to describe gas-phase chemical transformations during MOVPE of GaN. Attention was paid primarily to the processes of formation and decomposition of the stable adduct com...

    Yu E. Egorov, Yu N. Makarov in Simulation of Semiconductor Processes and … (1998)

  12. No Access

    Article

    Calorimetric validation of13C bicarbonate and doubly labeled water method for determining the energy expenditure in goats

    The purpose of the present study was to validate the13C bicarbonate method (13C-M) and the doubly labeled water method (DLWM) for the estimation of the CO2 production R(CO2) in goats as a ruminant model. Indirect...

    P. Junghans, M. Derno, M. Gehre, R. Höfling in Zeitschrift für Ernährungswissenschaft (1997)

  13. No Access

    Article

    Large-Area Growth of InGaN/AlGaN Using In-Situ Monitoring

    A newly developed Metalorganic Chemical Vapor Deposition (MOCVD) reactor for processing batches of seven 50mm wafers per run at deposition temperatures up to 1600°C is introduced. The substrates are individual...

    E. Woelk, D. Schmitz, G. Strauch, B. Wachtendorf in MRS Online Proceedings Library (1996)

  14. Article

    MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser

    For the growth of an electrically pumped lasing nitride emitter, the development of the MOCVD equipment and the process are mutually dependent. Most important is the implementation of the rapid temperature cha...

    H. Jürgensen, D. Schmitz, G. Strauch in MRS Internet Journal of Nitride Semiconduc… (1996)

  15. No Access

    Chapter and Conference Paper

    Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor

    Advances in development of mathematical models and numerial techniques for modelling of MOCVD in the Planetary Reactor™ are presented. Importance of coupled flow and mass transport calculations, accurate model...

    T. Bergunde, M. Dauelsberg, Yu. Egorov in Simulation of Semiconductor Devices and Pr… (1995)

  16. No Access

    Article

    Azelastine reduces allergen-induced nasal response: a clinical and rhinomanometric assessment

    The effect of azelastine 2 mg b.d. p.o. for 10 days on grass pollen-induced nasal responses in 16 patients with grass pollen allergic rhinitis has been assessed. The study was a double blind, randomized, place...

    A. Lurie, F. Saudubray, J. L. Eychenne in European Journal of Clinical Pharmacology (1992)

  17. No Access

    Article

    Effect of inhaled morphine on the bronchial response to isocapnic hyperventilation in patients with allergic asthma

    M. Mestiri, A. Lurie, N. Frossard, A. Lockhart in European Journal of Clinical Pharmacology (1991)

  18. No Access

    Article

    Inhibition of ex-vivo PAF-induced platelet aggregation by the PAF-antagonist RP 48740: relationship to plasma concentrations in healthy volunteers

    RP 48740, 3-(3-pyridyl)-1H,3H-pyrrolo [1,2-c] thiazole-7-carboxamide, a specific competitive PAF-receptor antagonist in vitro, was given to 29 healthy male volunteers for 7 days. Plasma drug concentrations and...

    J. L. Pinquier, P. Sedivy, R. Bruno in European Journal of Clinical Pharmacology (1991)

  19. No Access

    Article

    Multiwafer Production of Long Wavelength Epitaxial Material

    M. Heyen, D. Schmitz, G. Strauch, H. ürgensen in MRS Online Proceedings Library (1990)

  20. No Access

    Article

    Low Pressure Growth of GaAs/AlGaAs Layers on 2N and 3N Substrates in a Multiwafer Reactor

    The epitaxial growth of GaAs/AIGaAs layers and multilayer structures has been investigated in different low pressure horizontal multiwafer reactors for high throughput capable to handle several 2“ and 3“ wafer...

    M. Heyen, M. Heuken, G. Strauch, D. Schmitz, H. Jurgensen in MRS Online Proceedings Library (1989)

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