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    Lasing in direct-bandgap GeSn alloy grown on Si

    Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing at low temperatures.

    S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica… in Nature Photonics (2015)