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  1. No Access

    Article

    Dielectric Morphology and RRAM Resistive Switching Characteristics

    The connection between the bi-polar hafnia-based resistive-RAM (RRAM) operational characteristics and dielectric structural properties is considered. Specifically, the atomic-level description of RRAM, which o...

    G. Bersuker, B. Butcher, D.C. Gilmer, L. Larcher… in MRS Online Proceedings Library (2014)

  2. No Access

    Article

    Hafnia surface and high-k gate stacks

    Hafnium dioxide that belongs to a class of metal oxides with a high dielectric constant or high-k dielectrics has been recently introduced as a gate dielectric in field effect transistors. We report a theoreti...

    X. Luo, Alexander A. Demkov, O. Sharia, G. Bersuker in MRS Online Proceedings Library (2009)

  3. No Access

    Article

    Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance

    Electron traps in ALD and MOCVD HfO2 and HfSiO high-k dielectrics were investigated using both conventional DC and pulse measurements. It was found that the traps in the gate stack could be associated with defect...

    G. Bersuker, J.H. Sim, C.D. Young, R. Choi, B. H. Lee… in MRS Online Proceedings Library (2003)

  4. No Access

    Article

    Experimental Study of Etched Back Thermal Oxide for Optimization of the Si/High-k Interface

    We have demonstrated a uniform, robust interface for high-k deposition with significant improvements in device electrical performance compared to conventional surface preparation techniques. The interface was ...

    Joel Barnett, N. Moumen, J. Gutt, M. Gardner, C. Huffman… in MRS Online Proceedings Library (2003)

  5. No Access

    Article

    Electrical and Physical Characterization of Ultrathin Silicon Oxynitride Gate Dielectric Films Formed by the Jet Vapor Deposition Technique

    This paper describes the electrical and physical characteristics of ultrathin Jet Vapor Deposited (JVD) Silicon Oxynitride films. Capacitance-Voltage measurements indicate an equivalent oxide thickness (EOT) o...

    A. Karamcheti, V. H. C. Watt, T. Y. Luo, D. Brady… in MRS Online Proceedings Library (1999)

  6. No Access

    Article

    Process and Manufacturing Challenges for High-K Gate Stack Systems

    A design-of-experiments methodology was implemented to assess the commercial equipment viability to fabricate the high-K dielectrics Ta2O5, TiO2 and BST (70/30 and 50/50 compositions) for use as gate dielectrics....

    M. C. Gilmer, T. Y. Luo, H. R. Huff, M. D. Jackson… in MRS Online Proceedings Library (1999)