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Article
Short term memory bowing effect is consistent with presentation rate dependent decay
I reanalyze the free recall data of Murdock, J Exp Psychol 64(5):482–488 (1962) and Murdock and Okada, J Verbal Learn and Verbal Behav 86:263–267 (1970) which show the famous bowing effect in which initial and re...
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Article
There is no capacity limited buffer in the Murdock (1962) free recall data
Theories of short term memory often include a limited capacity “buffer”. Such a buffer contains items which do not decay at all but are overwritten by new data. I show that one of the experiments that fueled t...
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Article
Short term memory may be the depletion of the readily releasable pool of presynaptic neurotransmitter vesicles of a metastable long term memory trace pattern
The Tagging/Retagging model of short term memory was introduced earlier (Tarnow in Cogn Neurodyn 2(4):347–353, 2008) to explain the linear relationship between response time and correct response probability for w...
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Article
Response probability and response time: a straight line, the Tagging/Retagging interpretation of short term memory, an operational definition of meaningfulness and short term memory time decay and search time
The functional relationship between correct response probability and response time is investigated in data sets from Rubin, Hinton and Wenzel, J Exp Psychol Learn Mem Cogn 25:1161–1176, 1999 and Anderson, J Ex...
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Article
When extra authors get in on the act
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Article
The Si Vacancy: An Example of a Pressure-Sensitive Jahn-Teller System
We calculate the trends in the Jahn-Teller (JT) parameters of the Si vacancy as a function of the breathing mode coordinate. Using ab-initio local-density-functional theory and Hellman— Feynman forces we find the...
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Article
An Insulating Overlayer for GaAs
We predict, on the basis of ab-initio total energy calculations, that epitaxial growth of I-VII compounds on III-V substrates can be accomplished (see Fig. 1). We suggest specific combinations of I-VII materials ...
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Article
The Relationship Between the Microscopic Properties of Semiconducting Grain Boundaries and their Orientation
The microscopic structure of a tilt and a twist boundary in germanium are explored using a state-of-the-art total energy calculation. The structure of the tilt boundary (Σ=5 (310)) is found to be simple as it ...
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Article
Peculiar Do** Behavior of Si:Be.
The total energies and structures of a number of Be-induced defects in Si are investigated using ab-initio local density calculations. Our primary results are: 1) The geometry of the isoelectronic center is found...