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    Nondestructive diagnostics of nanoheterostructures with InGaN/GaN multiple quantum wells by thermal admittance spectroscopy

    On the basis of the designed complex of low-temperature admittance spectroscopy, the electron spectrum of semiconductor light emitting diode (LED) heterostructures with InGaN/GaN multiple quantum wells was inv...

    O. V. Kucherova, V. I. Zubkov, E. O. Tsvelev, I. N. Yakovlev… in Inorganic Materials (2011)