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Article
Open AccessInterface-type tunable oxygen ion dynamics for physical reservoir computing
Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reser...
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Article
Open AccessA low-power vertical dual-gate neurotransistor with short-term memory for high energy-efficient neuromorphic computing
Neuromorphic computing aims to emulate the computing processes of the brain by replicating the functions of biological neural networks using electronic counterparts. One promising approach is dendritic computi...
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Article
Open AccessLow power flexible monolayer MoS2 integrated circuits
Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ...
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Article
Open AccessEcho state graph neural networks with analogue random resistive memory arrays
Recent years have witnessed a surge of interest in learning representations of graph-structured data, with applications from social networks to drug discovery. However, graph neural networks, the machine learn...
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Article
Open AccessA highly CMOS compatible hafnia-based ferroelectric diode
Memory devices with high speed and high density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifyi...
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Article
Open AccessSpin-induced multiferroicity in the binary perovskite manganite Mn2O3
The ABO3 perovskite oxides exhibit a wide range of interesting physical phenomena remaining in the focus of extensive scientific investigations and various industrial applications. In order to form a perovskite s...
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Article
Open AccessGiant magnetoelectric effects achieved by tuning spin cone symmetry in Y-type hexaferrites
Multiferroics materials, which exhibit coupled magnetic and ferroelectric properties, have attracted tremendous research interest because of their potential in constructing next-generation multifunctional devi...
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Article
Open AccessA multilevel nonvolatile magnetoelectric memory
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of mul...
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Article
Reversible Multi-level Resistance Switching of Ag-La0.7Ca0.3MnO3-Pt Heterostructures
Resistance random access memory (RRAM) has attracted intense attention in recent years for the potential application as nonvolatile memory. One of the tempting properties of RRAM is the multi-level memory, in ...
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Article
Reversible multilevel resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures
The electric-pulse–induced resistance switching of the Ag–La0.7Ca03MnO3(LCMO)–Pt heterostructures was studied. The multilevel resistance switching (MLRS), in which several resistance states can be obtained, was o...
