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Article
Ion-Beam Reactive Sputter Deposition of MgO Thin Films on Silicon and Sapphire Substrates
MgO thin films were deposited on silicon and sapphire substrates using ion-beam reactive sputtering. Films have been analyzed using x-ray diffraction, transmission electron microscopy, and atomic force microsc...
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Article
Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films
The consequence of tungsten metal purity on the electrical properties of an annealed MOS gate stack with a lanthanum silicate gate dielectric has been investigated. Optimization of the electrical and physical ...
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Article
Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs
High-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSF...
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Article
Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties
The properties of lanthanum silicate (LaSiOx) gate stacks on GaAs substrates have been examined, comparing different GaAs pretreatments; namely a) as-received, b) HCl-treated, and c) sulphur-treated. X-ray pho...
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Article
Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs
The interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of a...
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Article
Gate Stack Reliability of high-Mobility 4H-SiC Lateral MOSFETs with Deposited AI2O3 Gate Dielectric
Lateral nMOSFETs have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. A bi-layer dielectric was utilized consisting of thin nitrided SiO2 covered by 25nm of Al2O3 deposited usi...
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Article
Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC
In this report we present results comparing lateral MOSFET properties of devices fabricated on Si-face (0001) and A-face (11-20) 4H-SiC, with nitric oxide passivation anneals. We observe a field-effect mobilit...
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Article
Performance and Reliability of SiC Power MOSFETs
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFE...