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  1. No Access

    Article

    Performance and Reliability of SiC Power MOSFETs

    Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFE...

    Daniel J. Lichtenwalner, Brett Hull, Vipindas Pala, Edward Van Brunt… in MRS Advances (2016)

  2. No Access

    Article

    Comparison of channel mobility and oxide properties of MOSFET devices on Si-face (0001) and A-face (11-20) 4H-SiC

    In this report we present results comparing lateral MOSFET properties of devices fabricated on Si-face (0001) and A-face (11-20) 4H-SiC, with nitric oxide passivation anneals. We observe a field-effect mobilit...

    Daniel J. Lichtenwalner, Lin Cheng, Scott Allen… in MRS Online Proceedings Library (2014)

  3. No Access

    Article

    Gate Stack Reliability of high-Mobility 4H-SiC Lateral MOSFETs with Deposited AI2O3 Gate Dielectric

    Lateral nMOSFETs have been fabricated on 4H-SiC utilizing deposited dielectrics and gate-last processing. A bi-layer dielectric was utilized consisting of thin nitrided SiO2 covered by 25nm of Al2O3 deposited usi...

    Daniel J. Lichtenwalner, Veena Misra, Sarit Dhar… in MRS Online Proceedings Library (2009)

  4. No Access

    Article

    Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for N-channel GaAs MOSFETs

    The interface and electrical properties of HfAlO dielectric formed by atomic layer deposition (ALD) on sulfur-passivated GaAs were investigated. X-ray photoelectron spectroscopy (XPS) revealed the absence of a...

    Rahul Suri, Daniel J. Lichtenwalner, Veena Misra in MRS Online Proceedings Library (2009)

  5. No Access

    Article

    Effect of GaAs Surface Treatments on Lanthanum Silicate High-K Dielectric Gate Stack Properties

    The properties of lanthanum silicate (LaSiOx) gate stacks on GaAs substrates have been examined, comparing different GaAs pretreatments; namely a) as-received, b) HCl-treated, and c) sulphur-treated. X-ray pho...

    Daniel J. Lichtenwalner, Rahul Suri, Veena Misra in MRS Online Proceedings Library (2008)

  6. No Access

    Article

    Epitaxial Growth of High-κ Dielectrics for GaN MOSFETs

    High-dielectric constant (high-κ) oxide growth on hexagonal-GaN (on sapphire) is examined for potential use in enhancement-mode metal oxide semiconductor field effect transistor (MOSFET). Enhancement-mode MOSF...

    Jesse S. Jur, Ginger D. Wheeler, Matthew T. Veety… in MRS Online Proceedings Library (2008)

  7. No Access

    Article

    Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films

    The consequence of tungsten metal purity on the electrical properties of an annealed MOS gate stack with a lanthanum silicate gate dielectric has been investigated. Optimization of the electrical and physical ...

    Jesse Stephen Jur, Daniel J. Lichtenwalner, Naoya Inoue… in MRS Online Proceedings Library (2006)

  8. No Access

    Article

    Ion-Beam Reactive Sputter Deposition of MgO Thin Films on Silicon and Sapphire Substrates

    MgO thin films were deposited on silicon and sapphire substrates using ion-beam reactive sputtering. Films have been analyzed using x-ray diffraction, transmission electron microscopy, and atomic force microsc...

    Alice F. Chow, Shang Hsieh Rou, Daniel J. Lichtenwalner… in MRS Online Proceedings Library (1992)