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    TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

    In this study, we propose a ferroelectric FET (FeFET) structure termed dual ferroelectric recessed channel FeFET (DF-RFeFET), employing metal–ferroelectric (FE)–metal–FE–metal–SiO2 interlayer (IL)–silicon (MFMFMI...

    Simin Chen, Dae-Hwan Ahn, Seong Ui An… in Journal of the Korean Physical Society (2024)