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  1. No Access

    Article

    The Decomposition of Trimethylgallium and Trimethylaluminum on Si(100)

    The decomposition of trimethylgallium (TMG) and trimethylaluminum (TMA) on Si(100) is studied by TPD, XPS, and EELS. It is found that the decomposition of TMG is largely an intramolecular process. First one of...

    F. Lee, T. R. Gow, R. Lin, A. L. Backman, D. Lubben… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Zum Stand der Hörgeräteversorgung bei Schülern und Schülerinnen der Schwerhörigen- und Gehörlosenschule

    E. Seifert, S. Rose, M. Hahn, J. Guggenmos, D. Lübben, H.-J. Radü… in HNO (2001)

  3. No Access

    Article

    Mechanisms of Enhanced Ionic Conduction at Interfaces in Ceramics

    A large enhancement in the ionic conductivity of certain compounds occurs when the compound is produced as a composite material containing a finely-dispersed non-conductor such as SiO2 or Al2O3 This effect has be...

    D. Lubben, F. A. Modine in MRS Online Proceedings Library (1994)

  4. No Access

    Article

    Ionic Conduction Mechanisms in CaF2 and CaF2-Al2O3 Nanocomposite Films on Al2O3 Substrates

    Thin films of pure CaF2 and nanocomposite mixtures of Al2O3 with CaF2 were sublimated on Al2O3 substrates. Interdigital electrodes allowed in situ measurements of the electrical conduction of films as a function ...

    F. A. Modine, D. Lubben, J. B. Bates in MRS Online Proceedings Library (1993)

  5. No Access

    Article

    Enhanced Ionic Conduction at the Film/Substrate Interface in LiI Thin Films Grown on Sapphire(0001)

    The ionic conductivity of LiI thin films grown on sapphire(0001) substrates has been studied in-situ during deposition as a function of film thickness and deposition conditions. LiI films were produced at room te...

    D. Lubben, F. A. Modine in MRS Online Proceedings Library (1993)

  6. No Access

    Article

    UV Photostimulated Si Atomic-Layer Epitaxy

    Single-crystal Si films have been grown on Si(001)2×1 substrates by UVphotostimulated atomic-layer epitaxy (ALE) from Si2H6. The ALE deposition rate R per growth cycle remains constant at 0.4 monolayers (ML) over...

    D. Lubben, R. Tsu, T. R. Bramblett, J. E. Greene in MRS Online Proceedings Library (1991)

  7. No Access

    Chapter

    Laser-Induced Photodissociation of A12(CH3)6: Gas-Phase and Adsorbed Layer Dissociation Mechanisms for A1 Film Growth

    In recent years, photolytic laser-induced chemical vapor deposition (LCVD) has become an important addition to the available thin-film growth techniques.[1] The motivation for LCVD is twofold. By focusing and ...

    D. Lubben, T. Motooka, J. F. Wendelken… in Mechanisms of Reactions of Organometallic … (1989)

  8. No Access

    Article

    Xps, Ups, and Hreels Studies of Excimer-Laser-Induced Dissociation of Al2(Ch3) Adsorbed on Si(100) Surfaces

    ArF (193 nm) and KrF (248 nm) laser-induced dissociation of Al2(CH3)6 (TMA) adsorbed on Si(100) surfaces have been investigated using x-ray photo-electron, ultraviolet photoelectron, and high-resolution electron ...

    D. Lubben, T. Motooka, J. E. Greene, J. F. Wendelken… in MRS Online Proceedings Library (1987)

  9. No Access

    Article

    Primary and Secondary Ion Deposition of Epitaxial Semiconductor Films from Laser-Induced Plasmas

    Primary and secondary ion deposition of epitaxial semiconductor films from laser-induced plasmas is reported Laser plasmas were generated by focusing 15 ns, 107 to 108 W/cm2 pulses of 5 eV photons from a KrF exci...

    D. Lubben, S. A. Barnett, K. Suzuki, J. E. Greene in MRS Online Proceedings Library (1983)

  10. No Access

    Article

    Semiconductor Thin Films Grown by Laser Photolysis

    Thin (< 1.2 µpm) Ge and Si films have been grown with rates up to 3.6 µm/hr by laser-induced chemical vapor deposition (LCVD) on a variety of substrates. Germanium films grown on amorphous SiO2 (quartz) by photod...

    J. G. Eden, J. E. Greene, J. F. Osmundsen, D. Lubben… in MRS Online Proceedings Library (1982)

  11. No Access

    Article

    Epitaxial Ge/GaAs Heterostructures by Scanned CW Laser Annealing of a-GE Layers on GaAs

    Epitaxial regrowth of Ge/GaAs heterostructures by scanned laser annealing of amorphous Ge films on GaAs substrates has been studied as a function of laser power and scan rate. At least eight regimes representi...

    J. E. Greene, K. C. Cadien, D. Lubben, G. A. Hawkins… in MRS Online Proceedings Library (1981)