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    Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy

    In this investigation buried Sb dopant profiles in single crystal silicon have been formed from evaporated layers using laser annealing. For irradiations carried out in air, severe oxidation of the surface lay...

    R. J. Carolissen, D. K. Knoesen, W. C. Sinke, R. Pretorius in Journal of Materials Research (1993)