-
Article
Electron-lattice interaction in the absorption spectra of thallium doped alkali halides
The electron-lattice interaction of NaCl:Tl+, KCl:Tl+, KBr:Tl+, and KI:Tl+ is discussed using the moments of the absorption bands. The discussion is based on a theory ofToyozawa andInoue andHonma. Consistency of ...
-
Chapter and Conference Paper
Direct Determination of the Free Electron Mass and g-Value in GaSb
A new simple method, not restricted to high-purity materials, for direct determination of free electron mass and g-value is presented. The method involves the magnetic field- and temperature dependences of the...
-
Article
Dam** of the motion of electron-hole drops in magnetic fields
We report the observation of an unexpectedly large dam** caused by small transverse magnetic fields on the motion of electron-hole drops (EHD) in germanium. Possible causes for the dam** are discussed, and...
-
Article
Orientational dependence of the shape of a γ-electron-hole liquid in a magnetic field
The shape of a γ-drop, a strain-confined electron-hole liquid, deforms anisotropically in an external magnetic field. This deformation is directly observed by means of an IR image converter. The change of shap...
-
Chapter
Properties of Electron-Hole-Drops in Ge in Magnetic Field
In a number of semiconductors like Ge, Si, GaP and SiC1–3 a first order electronic phase transition occurs below a critical temperature in a dense system (plasma) of electrons and holes or excitons. The plasma se...
-
Chapter and Conference Paper
SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon
It is well established that silicon samples amorphized by ion implantation can be recrystallized by cw laser annealing [1,2]. The damaged surface layer is reconstructed by laser induced solid phase epitaxy [2,...
-
Article
SIMS-Untersuchung der Qualität von pn-Übergängen in ionenimplantiertem und cw-laserausgeheiltem Silicium
-
Chapter and Conference Paper
Advantages of Multiple Quantum Wells with Abrupt Interfaces for Light-Emitting Devices
Continuous excitation, time resolved and time delayed cathodo- and photoluminescence experiments prove that radiative recombination from narrow GaAs (and In0.53 Ga0.47 As) quantum wells (QWs) is of excitonic char...
-
Chapter and Conference Paper
Recombination Heating Induced Delayed Energy Relaxation of Nonequilibrium Charge Carriers
Recombination of nonequilibrium carriers leads to an increase of the temperature of the remaining carrier gas, if the recombination rate decreases with increasing energy and/or degenerate statistics applies. T...
-
Chapter and Conference Paper
High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation
A novel method to measure the temporal behaviour of ultrashort light pulses is presented. A semiconductor laser amplifier driven by short injection current pulses presents the light sensitive device in a cross...
-
Chapter and Conference Paper
Visualization and Theoretical Modelling of the Atomistic Structure of Semiconductor Quantum Well Interfaces
The atomic scale crystallographic and chemical properties of interfaces between semiconductors are of decisive importance for the performance of novel generations of electronic and photonic devices and are in ...
-
Article
Gain-switched semiconductor laser amplifier as an ultrafast dynamical optical gate
A gain-switched semiconductor laser is shown to act as an optical gate with picosecond resolution and amplification for light pulses from another laser source. The amplification mechanism and the gate width ch...
-
Chapter
The Interface as a Design Tool for Modelling of Optical and Electronic Properties of Quantum Well Devices
The atomic scale crystallographic and chemical properties of interfaces between semiconductors are of decisive importance for the performance of novel generations of electronic and photonic devices and are in ...
-
Chapter
High Injection Effects in GaAs/AlGaAs Quantum Wells: Spontaneous Recombination and Band-Gap Renormalization
In this paper, we report a feasible experimental approach to high injection effects in semiconductor light sources. We show that by measuring the junction voltage, the differential lifetime, and the relative o...
-
Chapter
4He and 3He Calorimetric Absorption Spectroscopy: Principles and Results on InGaAs/AlInAs Quantum Wells and Fe in InP and GaAs
A novel absorption technique, Calorimetric Absorption Spectroscopy (CAS), is compared to other photothermally based spectroscopic methods. CAS is more sensitive than any other low-temperature absorption techni...
-
Chapter and Conference Paper
Optical Properties of Quantum Wires Grown on Nonplanar Substrates
The structure and luminescence properties of GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are described. These crescent-shaped QWRs, as narrow as 1...
-
Chapter
Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates
The excess carrier capture and stimulated emission processes in GaAs/AlGaAs quantum wires (QWRs) grown by organometallic chemical vapor deposition on nonplanar substrates are discussed. These crescent shaped w...
-
Article
Photoluminescence Studies of a Quantum Well Modulated by Faceting on GaAs (110) Surfaces
Step bunching during epitaxial growth results in the transformation of a vicinal surface into a periodic array of micro-facets. Molecular beam epitaxial growth on the vicinal GaAs (110) surface exhibits this p...
-
Article
Rh: A Dopant With Mid-Gap Levels in InP and InGaAs and Superior Thermal Stability
We investigate the influence of Rh-do** on electrical properties of InP and InGaAs. Deep level transient spectroscopy carried out on Rh-doped as well as undoped reference samples reveals a single Rh-related ...
-
Article
Simultaneous Planarized Selective-Area Epitaxy of GaxIn1-xAs in Normal and Dove-tail Etched Grooves
Selective-area epitaxy was investigated by Cl-transport VPE growth of GaxIn1-xAs in features etched in a (001) InP wafer through windows of an SiO2 mask. Growth was conducted simultaneously on masked samples with...
