40 Result(s)
within
D. Bimberg
Characterization and Evaluation of Materials
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Article
Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 μm Range
Transmission electron microscopy (TEM), and photoluminescence (PL) have been used to evaluate defects and the efficiency of defect-reduction techniques in structures with InAs quantum dots (QDs) for the 1.55 µ...
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Article
Quantum dot photonic devices for lightwave communication
For InAs-GaAs based quantum dot lasers emitting at 1300 nm digital modulation showing an open eye pattern up to 12 Gb/s at room temperature is demonstrated, at 10 Gb/s the bit error rate is below 10-12 at -2 dBm ...
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Article
1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.
1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to redu...
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Article
1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures.
1.5 micron range emission has been realized using the InAs quantum dots embedded into the metamorphic InGaAs layer containing 20% of InAs grown by MBE on a GaAs substrate. Growth regimes were optimized to redu...
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Article
Long-wavelength quantum-dot lasers
Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) for use ...
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Article
Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
GaAs-based continuous-wave quantum-dot vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 µm at 20°C with output power of 1.2 mW have been realized. Threshold currents approach 1–1.5 mA for 8-µm...
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Chapter
Entropy Effects in the Self-Organized Formation of Nanostructures
A finite-temperature thermodynamic theory is developed for arrays of submonolayer islands in heteroepitaxial systems. It is established that the temperature dependence of the average island size at temperature...
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Chapter
Excitonic Composites
A new class of composite materials, excitonic composite, has been considered by the example of a collection of identical semiconductor quantum dots (QDs). The QD is modeled by a spatially confined exciton inte...
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Article
Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Re
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Article
Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe
Semi-insulating Fe and Ru codoped InP epitaxial layers grown by low-pressure hydride vapor phase epitaxy have been investigated. InP∶Ru and InP∶Fe, Ru layers were grown on p-InP∶Zn andn-InP∶S, substrates, in orde...
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Article
Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces
GaAs-AlAs corrugated superlattices (CSL) are formed on spontaneously nanofaceted (311)A surfaces. Using high-resolution transmission electron microscopy (HRTEM) along the
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Article
Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures
Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 800°C, and 880°C were investigated by High Resolution Transmission Electron Microscopy (HRTEM). ...
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Article
New Tools to Control Morphology of Self-Organized Quantum Dot Nanostructures
We consider several approaches to control morphology of self-organized quantum dot (QD) nanostructures. (i) We study effects of temperature and of temperature ram** on formation of QD arrays. The theory of equi...
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Article
InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices
Microcavity structures containing InGaAs-GaAs quantum dots (QDs) emitting at 1.3µm at 300 K have been studied. The energy distribution of excitons remains an nonequilibrium one up to room temperature due to hi...
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Article
Electromagnetic response of 3D arrays of quantum dots
A phenomenological theory of electromagnetic response properties of regular ensembles of quantum dots has been elaborated on the basis of the effective medium approach. We show that the QD composite comprising...
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Article
GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report
We review the present status of InGaAs quantum dot lasers on GaAs sub-strates emitting near and at 1.3 µm. Such lasers are shown to be extremely promising for cost-efficient commercial applications in optical ...
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Article
InAs Nanostructures in a Silicon Matrix: Growth and Properties
Under certain growth conditions InAs/Si heteroepitaxial growth proceeds via Stranski-Krastanow or Volmer-Weber growth modes depending on the growth parameters. Critical thickness at which three dimensional InA...
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Article
Mbe Growth, Structural and Optical Characterization of InAs/InGaAlAs Self-Organized Quantum Dots
InAs quantum dots (QD) have been shown to extend the optical emission range for III-V heterostructures pseudomorphically grown on GaAs substrates. One of the ways to achieve 1.3 micron emission from the InAs Q...
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Article
Spontaneous Formation of Arrays of Strained Islands: Thermodynamics Versus Kinetics
Options are discussed which allow to distinguish equilibrium arrays of strained islands from kinetically-controlled arrays. Finite-temperature thermodynamic theory is developed for equilibrium arrays of two-di...
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Article
MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots
In the present work we study the effect of vertical alignment in the quantum dot array formed by successive deposition of several rows of InAlAs and InGaAs quantum dots separated by thin AIGaAs spacer layers. ...
