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Open AccessNew-Generation Ferroelectric AlScN Materials
Ferroelectricity and domain dynamics of emerging ferroelectric AlScN films were discussed.
The performance optimization of f...
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Open AccessAuthor Correction: Atomic-level polarization reversal in sliding ferroelectric semiconductors
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Open AccessHalide Perovskite Inducing Anomalous Nonvolatile Polarization in Poly(vinylidene fluoride)-based Flexible Nanocomposites
Ferroelectric materials have important applications in transduction, data storage, and nonlinear optics. Inorganic ferroelectrics such as lead zirconate titanate possess large polarization, though they are rig...
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Open AccessAtomic-level polarization reversal in sliding ferroelectric semiconductors
Intriguing “slidetronics” has been reported in van der Waals (vdW) layered non-centrosymmetric materials and newly-emerging artificially-tuned twisted moiré superlattices, but correlative experiments that spat...
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Author Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing
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Open AccessLow-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration
Ferroelectric polymer-based electrocaloric effect may lead to sustainable heat pumps and refrigeration owing to the large electrocaloric-induced entropy changes, flexible, lightweight and zero-global warming p...
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Open AccessA ferroelectric fin diode for robust non-volatile memory
Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their perf...
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Article
Open AccessMultiresistance states in ferro- and antiferroelectric trilayer boron nitride
Stacking two atomic layers together can induce interlayer (sliding) ferroelectricity that is absent in their naturally occurring crystal forms. With the flexibility of two-dimensional materials, more layers co...
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Article
Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing
Recently, the increasing demand for data-centric applications is driving the elimination of image sensing, memory and computing unit interface, thus promising for latency- and energy-strict applications. Altho...
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Publisher Correction: Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing
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Open AccessIn-situ artificial retina with all-in-one reconfigurable photomemristor networks
Despite that in-sensor processing has been proposed to remove the latency and energy consumption during the inevitable data transfer between spatial-separated sensors, memories and processors in traditional co...
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Article
Research progress on 2D ferroelectric and ferrovalley materials and their neuromorphic application
Two-dimensional (2D) ferroelectric and ferrovalley materials have recently received extensive attention due to their significant advantages for modern electronic devices, such as miniaturization, low-dissipati...
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Associative learning of a three-terminal memristor network for digits recognition
Imitating the associative intelligence of the biological brain is attractive but is poorly achieved in hardware because the complex tunable connection in neural networks is difficult to reproduce. We develop a...
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Open AccessMolecular ferroelectric/semiconductor interfacial memristors for artificial synapses
With the burgeoning developments in artificial intelligence, hardware implementation of artificial neural network is also gaining pace. In this pursuit, ferroelectric devices (i.e., tunneling junctions and tra...
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Article
Revealing a high-density three-dimensional Ruddlesden–Popper-type fault network in an SmNiO3 thin film
An epitaxial SmNiO3 thin-film grown on an LaAlO3 (001) substrate using pulsed laser deposition is investigated with spherical-aberration corrected scanning transmission electron microscopy techniques, including h...
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Nonreciprocal directional dichroism in multiferroics
Nonreciprocal directional dichroism in multiferroics, namely magnetoelectric coupling in the dynamic regime, is endowed with rich physics and promising applications, which are entangled with fundamental physic...
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Open AccessFerroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
Traditional ferroelectric devices suffer a lack of scalability. Doped HfO2 thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline ...
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Open AccessZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO2 on the polarization P and electrical characteristics of TaN/ZrO2/Ge capacitors and FeFETs, respectively. After the RTA ...
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Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
Semiconductor devices based on two-dimensional (2D) transition metal dichalcogenides could help overcome the scaling limits of silicon complementary metal–oxide–semiconductor (CMOS) technology. However, the de...
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H2O2 decomposition catalyzed by strontium cobaltites and their application in Rhodamine B degradation in aqueous medium
The catalytic activities of three topotactic phase strontium cobaltites (SCO, hexagonal, orthorhombic and tetragonal) for H2O2 decomposition were studied. All they present excellent catalytic activity with good s...
