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  1. Article

    Open Access

    Fabrication and performance of highly stacked GeSi nanowire field effect transistors

    Horizontal gate-all-around field effect transistors (GAAFETs) are used to replace FinFETs due to their good electrostatics and short channel control. Highly stacked nanowire channels are widely believed to enh...

    Yu-Rui Chen, Yi-Chun Liu, Hsin-Cheng Lin, Chien-Te Tu… in Communications Engineering (2023)

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