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Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

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  1. Article

    Open Access

    Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs...

    Hongpo Hu, Shengjun Zhou, **ngtong Liu, Yilin Gao, Chengqun Gui… in Scientific Reports (2017)

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  2. Article

    Open Access

    The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

    The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN s...

    Shengjun Zhou, **ngtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao… in Scientific Reports (2018)

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