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  1. Article

    Open Access

    The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

    The development of efficient green light-emitting diodes (LEDs) is of paramount importance for the realization of colour-mixing white LEDs with a high luminous efficiency. While the insertion of an InGaN/GaN s...

    Shengjun Zhou, **ngtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao… in Scientific Reports (2018)

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  2. Article

    Open Access

    Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs...

    Hongpo Hu, Shengjun Zhou, **ngtong Liu, Yilin Gao, Chengqun Gui… in Scientific Reports (2017)

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  3. No Access

    Article

    Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling

    We introduce a temperature dependent anisotropic model for the stresses in gallium nitride (GaN) and aluminum nitride (AlN) films grown on Si(111) substrates and their epiwafer bow effects caused by thermal mi...

    Yiquan Dai, Shuiming Li, Hongwei Gao… in Journal of Materials Science: Materials in… (2016)