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  1. No Access

    Article

    Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices

    The effect of interface modification on the electrical properties of heterojunction diodes based on the p-type CuAlO2 and n-type Si is investigated. Compared with the CuAlO2/Si device without H2O2 treatment, the ...

    Yow-Jon Lin, Gi-Min Chang, Chang-Lin Wu in Journal of Materials Science: Materials in… (2018)

  2. No Access

    Article

    Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2S x treatment by chemical vapor deposition

    To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2S x treatment by chemical vapor deposition (CVD). X-ray ...

    Ting-Hong Su, Chang-Lin Wu… in Journal of Materials Science: Materials in… (2018)